Fabricate your Semiconductor Device - Electrical Pumping - Engineering Assignment Help

Assignment Task :

Q1. Describe steps in demonstrating a III-V semiconductor laser. 

• Will you use bottom-up or top-down methods or use a combination of both to grow/fabricate your semiconductor device? Why? 
• If you decide to use epitaxy, what layers will you grow, and with what thickness? Why? Please only talk about the order of magnitude of the thickness. 
• If you decide to use top-down fabrication, what would be your steps to get the required device structure? Please discuss the order of magnitude of the dimensions of the structures you will form using top-down fabrication. 
• What steps will you use to form your cavity? 
• How will you achieve population inversion (electrical pumping or optical pumping)? Why? 
• If using electrical pumping, how will you pump electrons into conduction band? 

Q2. After you fabricate your device, following the steps you outline in Q1, how will you test whether you have a laser or a light emitting diode? 

• How can you experimentally differentiate between the two devices? Will Young’s double slit experiment help?
• How? What do you expect from the experiments you chose?

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